/cm2 using, for example, phosphorus, arsenic, or boron to controllably increase or decrease the threshold voltage of a metal oxide semiconductor transistor. [SEMATECH]
Search the Dictionary
an ion implant of approximately 1 x /cm2 using, for example, phosphorus, arsenic, or boron to controllably increase or decrease the threshold voltage of a metal oxide semiconductor transistor. [SEMATECH]
Search the Dictionary
/cm2 using, for example, phosphorus, arsenic, or boron to controllably increase or decrease the threshold voltage of a metal oxide semiconductor transistor. [SEMATECH]
Search the Dictionary
